Computation of reflected images from extreme ultraviolet masks

Srinivas B. Bollepalli; Franco Cerrina

doi:10.1117/12.351132

25 June 1999 Computation of reflected images from extreme ultraviolet masks

Srinivas B. Bollepalli, Franco Cerrina

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351132
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

With EUV lithography emerging as a promising technology for semiconductor device fabrication with critical dimensions <EQ 100 nm, it is of importance to understand the image formation process in detail. The proposed setup includes a reflective mask consisting of an absorbing material over- coated on a stack of multilayers and 4X de-magnifying optics. In this paper we consider the reflective mask alone i.e. excluding the condenser system and the optics and characterize the reflective properties of the extreme ultra violet mask. In particular, we show the effects caused due to diffraction, non-uniformities in the multilayer stack due to substrate defects, and partial spatial coherence. Several simulation examples are presented.

Citation Download Citation

Srinivas B. Bollepalli and Franco Cerrina "Computation of reflected images from extreme ultraviolet masks", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351132

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