Monte Carlo simulation of charging effects in linewidth metrology: II. On insulator substrate

Yeong-Uk Ko; Myung-Sai Chung

doi:10.1117/12.350851

14 June 1999 Monte Carlo simulation of charging effects in linewidth metrology: II. On insulator substrate

Yeong-Uk Ko, Myung-Sai Chung

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350851
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Charging effect have been investigated quantitatively using Monte Carlo simulation when the linewidth of PMMA insulator patterns on SiO₂ insulator substrate is measured by scanning electron microscope. We set reference operating and shape conditions for array pattern and calculated the offset on linewidth metrology according to change of each condition. We have used 50 percent threshold algorithm for the edge determination and calculated the offsets in those conditions. And we compare with the result with the case of Si substrate and finally we discussed which facto is most sensitive in linewidth metrology.

Citation Download Citation

Yeong-Uk Ko and Myung-Sai Chung "Monte Carlo simulation of charging effects in linewidth metrology: II. On insulator substrate", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350851

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