Paper
11 June 1999 Outlook for 157-nm resist design
Roderick R. Kunz, Theodore M. Bloomstein, D. E. Hardy, Russell B. Goodman, Deanna K. Downs, Jane E. Curtin
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Abstract
We have measured the transparencies of a number of a candidate resist materials for 157 nm, with an emphasis on determining which chemical platforms would allow resist to be used at maximum thicknesses while meeting requirements for optical density. Assuming an ideal resist optical density of 0.4, our findings show that all existing commercially available resists would need to be < 90 nm thick, whereas specialized hydrocarbon resists could be made approximately 120 nm thick, and new resists based on hydrofluorocarbons, siloxanes, and/or silsesquioxanes could be engineered to be used in thicknesses approaching 200 nm. We also assess the tradeoff between these thicknesses and what current information exists regarding defects as a function of resist thickness.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roderick R. Kunz, Theodore M. Bloomstein, D. E. Hardy, Russell B. Goodman, Deanna K. Downs, and Jane E. Curtin "Outlook for 157-nm resist design", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350200
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Cited by 46 scholarly publications and 16 patents.
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KEYWORDS
Absorbance

Absorption

Polymers

Lithography

Electrons

Photons

Extreme ultraviolet

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