ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes

Jan Mulkens; Judon M. D. Stoeldraijer; Guy Davies; Marcel Dierichs; Barbra Heskamp; Marco H. P. Moers; Richard A. George; Oliver Roempp; Holger Glatzel; Christian Wagner; Ingrid Pollers; Patrick Jaenen

doi:10.1117/12.354362

26 July 1999 ArF step-and-scan exposure system for 0.15-μm and 0.13-μm technology nodes

Jan Mulkens, Judon M. D. Stoeldraijer, Guy Davies, Marcel Dierichs, Barbra Heskamp, Marco H. P. Moers, Richard A. George, Oliver Roempp, Holger Glatzel, Christian Wagner, Ingrid Pollers, Patrick Jaenen

Author Affiliations +

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354362
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

This paper presents an evaluation on the 0.15 micrometers and 0.13 micrometers lithographic patterning alternatives for semiconductor devices. Baseline for the evaluation is a first generation ArF step and scan exposure system with 0.63 NA projection optics. The system layout is discussed and main performance data on imaging, overlay and throughput are presented. Binary masks, and various advanced 193 nm resist system are used to evalute process latitudes of dense lines, isolated lines and contact holes. The manufacturing economics, expressed in Cost Of Ownership, are evaluated for an ArF based production technology, and compared to critical layer KrF.

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Jan Mulkens, Judon M. D. Stoeldraijer, Guy Davies, Marcel Dierichs, Barbra Heskamp, Marco H. P. Moers, Richard A. George, Oliver Roempp, Holger Glatzel, Christian Wagner, Ingrid Pollers, and Patrick Jaenen "ArF step-and-scan exposure system for 0.15-μm and 0.13-μm technology nodes", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354362

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