Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography

Donggyu Yim; Ki-Sung Kwon; Young-Mog Ham; Ki-Ho Baik

doi:10.1117/12.354326

26 July 1999 Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography

Donggyu Yim, Ki-Sung Kwon, Young-Mog Ham, Ki-Ho Baik

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354326
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Critical issues for 150nm DUV lithography using 0.70 NA KrF and 0.60 NA ArF had been investigated. Aberration, coherence variation, mask error effect, and process margin for each case had been analyzed. Current projection lens and illumination optics are getting better and better. However, for 150nm lithography using high NA scanner, a large portion of beam should be traced on the outside of lens pupil and traced on the resist surface with a large incident angle. In such a case, lens aberration effect was observed on field edge, even though strehl ratio of projection lens and coherence variation on field edge had been improved. These effects had been investigated. One other critical issue in high NA scanner is depth of focus. The common depth of focus between dense and isolated patterns in real process using high NA scanner is mainly affected by photoresist thickness. That issue had been also investigated. Another important issue for 150nm DUV lithography is mask error effect. In the case of same design rule, lower (lambda) /NA lens is more favored than higher (lambda) /NA. Mask error issue in high NA KrF and ArF was also analyzed. Total comparisons between high NA KrF and 0.60 NA ArF have been discussed.

Citation Download Citation

Donggyu Yim, Ki-Sung Kwon, Young-Mog Ham, and Ki-Ho Baik "Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354326

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