Paper
3 September 1999 Combine technique of conducting materials testing at high pressures
Vladimir V. Shchennikov, Andrew Yu. Derevskov, Vladimir I. Osotov
Author Affiliations +
Abstract
The technique of investigations of resistance (rho) , thermoelectric power S, and galvanomagnetic properties of materials by the two-terminal method of measurements under pressure up to 30 GPa is discussed. The combine of stationary and nonstationary regimes of treatment, variation of high pressure chambers with conducting or insulating plungers and using of simultaneous and parallel measurements of various properties are proposed to estimate the parameters of materials under testing. The results of investigations of initial semiconductor and high pressure metal phases of Ge, Te, and molecular solid-Iodine up to 30 GPa at the diamond- plungers apparatus are represented. The technique may be useful for semiconductor fabricated device treatment.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Shchennikov, Andrew Yu. Derevskov, and Vladimir I. Osotov "Combine technique of conducting materials testing at high pressures", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361316
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KEYWORDS
Diamond

Semiconductors

Tellurium

Metals

Sensors

Solids

Magnetism

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