Lithographic CD variation in contact, via, local interconnect, and damascene levels

Yorick Trouiller; Anne Didiergeorges; Gilles L. Fanget; Cyrille Laviron; Corinne Comboroure; Yves Quere

doi:10.1117/12.360577

11 August 1999 Lithographic CD variation in contact, via, local interconnect, and damascene levels

Yorick Trouiller, Anne Didiergeorges, Gilles L. Fanget, Cyrille Laviron, Corinne Comboroure, Yves Quere

Proceedings Volume 3883, Multilevel Interconnect Technology III; (1999) https://doi.org/10.1117/12.360577
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The goal of this paper is to understand the optical phenomena at dielectric levels (contact, local interconnect, via and damascene line levels). The purpose is also to quantify the impact of dielectric and resist thickness variations on the CD range with and without Bottom Anti Reflective Coating (BARC). First we will show how all dielectric levels can be reduced to the stack metal/oxide/BARC/resist, and what are the contributions to resist and dielectric thickness range for each levels. Then a simple model will be developed to understand CD variation in this stack: by extending the Perot-Fabry model to the dielectric levels, developed by Brunner for the gate level, we can obtain a simple relation between the CD variation and all parameters (metal, oxide thickness, resist thickness, BARC absorbency). Experimentally CD variations for damascene line level on 0.18 micrometers technology has been measured depending on oxide thickness and resist thickness and can confirm this model. UV5 resist, AR2 BARC from Shipley and Top ARC from JSR have been used for these experiments.

Citation Download Citation

Yorick Trouiller, Anne Didiergeorges, Gilles L. Fanget, Cyrille Laviron, Corinne Comboroure, and Yves Quere "Lithographic CD variation in contact, via, local interconnect, and damascene levels", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360577

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