Advanced rf CMOS technology

Hiroshi Iwai; Tatsuya Ohguro; Eiji Morifuji; Takashi Yoshitomi; Hideki Kimijima; Hisayo S. Momose; Kazumi Inoh; Hideaki Nii; Yasuhiro Katsumata

doi:10.1117/12.364461

29 September 1999 Advanced rf CMOS technology

Hiroshi Iwai, Tatsuya Ohguro, Eiji Morifuji, Takashi Yoshitomi, Hideki Kimijima, Hisayo S. Momose, Kazumi Inoh, Hideaki Nii, Yasuhiro Katsumata

Author Affiliations +

Proceedings Volume 3891, Electronics and Structures for MEMS; (1999) https://doi.org/10.1117/12.364461
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

CMOS has been used for advanced LSIs so many years because of its excellent low-power and high-speed characteristics for highly-integrated digital circuits. For high frequency analog applications such as RF, it has not been used popularly because CMOS has been assumed to have poor capability compared with silicon bipolar and compound semiconductor devices. However, recent miniaturization of CMOS devices has significantly improved the CMOS RF characteristics. For example, typical values of f_T and fmax for 0.25 micrometers n-MOSFETs already exceed 40 GHz, and those for 0.1 micrometers n-MOSFETs are more than 100 GHz. RF noise of the MOSFETs is also as god as less than 1 dB at 2 GHz operations. In this paper, CMOS technology for RF front- end circuit for mobile telecommunication devices is explained.

Citation Download Citation

Hiroshi Iwai, Tatsuya Ohguro, Eiji Morifuji, Takashi Yoshitomi, Hideki Kimijima, Hisayo S. Momose, Kazumi Inoh, Hideaki Nii, and Yasuhiro Katsumata "Advanced rf CMOS technology", Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); https://doi.org/10.1117/12.364461

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