Lens FPD and LH effect on CD control of lithography process

D. F. Huang; Chih-Chien Hung

doi:10.1117/12.364495

1 October 1999 Lens FPD and LH effect on CD control of lithography process

D. F. Huang, Chih-Chien Hung

Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364495
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

As device geometries are shrinking towards sub-micron and below generations, the critical dimension (CD) control becomes more and more important in lithography process. The CD variations are contributed from some factors, including lens performance, resist thickness uniformity and mask dimension error etc. Two important parts of the available CD budget are caused by lens FPD and LH effect. In this paper we had investigated the relation among CD control, FPD and LH effect by LH monitor system, and compared with the results of ASMLs lens qualification. The experimental results are showed the across field CD variation could meet the conventional ASMLs lens qualification. The variation in critical dimension as a function of exposure field position is an important error component in CD control, which depends on the distribution of best focus within field location. The lens heating CD monitor system was evaluated extensively to determinate the lens heating correction parameters and optimize the focus compensated function. In addition, the lens performance was examined effectively and efficiently during cooling/heating process, including focal plane deviation, field curvature and image tilt etc.

Citation Download Citation

D. F. Huang and Chih-Chien Hung "Lens FPD and LH effect on CD control of lithography process", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364495

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