Demagnification by bias in proximity x-ray lithography

Kong Jong Ren; Quinn J. Leonard; Yuli Vladimirsky; Antony J. Bourdillon

doi:10.1117/12.390044

21 July 2000 Demagnification by bias in proximity x-ray lithography

Kong Jong Ren, Quinn J. Leonard, Yuli Vladimirsky, Antony J. Bourdillon

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390044
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The ability to produce fine features using X-ray proximity lithography is controlled predominantly by diffraction and photoelectron blur. The diffraction manifests itself as feature 'bias.' The classical approach is to attempt to minimize the bias; that is, to print features which are 1:1 images of those on the mask. However, bias can also be exploited to print features smaller than those on the mask. This demagnification-by-bias technique can be optimized with respect to mask-wafer gap and resist processing, and can provide reductions of 3X to 6X. Demagnification offers many of the same advantages as projection optical lithography in terms of critical dimension control: relaxed mask features CD. In addition, it provides a very large 'depth of focus' and wide dose latitude. In consequence proximity X-ray lithography is extendible to feature sizes below 25 nm, taking advantage of comparatively large mask features (> 0.1 nm) and large gaps (10 -25 micrometer). The method was demonstrated for demagnification values down to X3.5. To produce DRAM half- pitch fine features techniques such as multiple exposures with a single development step are proposed.

Citation Download Citation

Kong Jong Ren, Quinn J. Leonard, Yuli Vladimirsky, and Antony J. Bourdillon "Demagnification by bias in proximity x-ray lithography", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390044

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