Paper
21 July 2000 Pattern transfer distortions in IPL and EPL masks with pattern density gradients
Gary A. Frisque, Edward G. Lovell, Roxann L. Engelstad
Author Affiliations +
Abstract
Stringent error budgets for Next Generation Lithography masks require accurate pattern placement. Therefore, predictions of distortions induced during mask fabrication and usage are needed to optimize processing and exposure conditions. This paper focuses on the in-plane distortions resulting from pattern transfer during the fabrication of ion-beam projection lithography and electron-beam projection lithography stencil masks.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary A. Frisque, Edward G. Lovell, and Roxann L. Engelstad "Pattern transfer distortions in IPL and EPL masks with pattern density gradients", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390096
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CITATIONS
Cited by 18 scholarly publications.
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KEYWORDS
Photomasks

Silicon

Error analysis

Optical lithography

Chemical elements

Lithography

Projection lithography

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