Low k1 process optimization for i-line lithography

Jeong Won Kim; Hoon Huh; Sang-Bum Han

doi:10.1117/12.388950

5 July 2000 Low k₁ process optimization for i-line lithography

Jeong Won Kim, Hoon Huh, Sang-Bum Han

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388950
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The shrinkage of design rule and low-cost production need the extension of i-line lithographic equipments below 0.30micrometers patterning. The various resolution enhancement techniques (RETs) of i-line lithography have been implemented for low k1 process. In this paper, we optimized the optical and material parameters such as the resist thickness, mask type, off-axis illumination (OAI), and bottom anti-reflective coating for line/space patterns below 0.30micrometers design rule. We designed the experimental scheme on the basis of the statistical method and analyzed the result such as resolution, process margin, optical proximity effect, etc. The minimum resolution of 0.22 micrometers was achieved using the above RET methods where the k1 factor was 0.38. The OAI method plays a crucial role for the resolution enhancement. The thin resist process has an advantage for minimization of OPE factor. We also discus the correlation of the optimized parameters and suggest a combination of the RET method for the specific feature type.

Citation Download Citation

Jeong Won Kim, Hoon Huh, and Sang-Bum Han "Low k₁ process optimization for i-line lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388950

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