Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET

Jung Chuan Chou; Hsjian-Ming Tsai; Yii Fang Wang

doi:10.1117/12.392126

11 July 2000 Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET

Jung Chuan Chou, Hsjian-Ming Tsai, Yii Fang Wang

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392126
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

In application of the pH-ISFET, the hysteresis and temperature effects are two important influences of accuracy. There have been many studies about the above subjects, however, the hysteresis behaviour will change with the temperature and affect the reproducibility of the devices. Hence, we study the temperature dependence of the hysteresis behaviour for the pH-ISFET with a-Si:H gate insulator deposited by the PE-LPCVD system in this paper. The thickness of the a-Si:H was about 2000 A. The temperature is controlled by the P.I.D. temperature controlled system and the hysteresis behaviour is measured by the constant voltage-constant current circuit and voltage-time recorder. The measurement is completed at 25 degree(s)C, 35 degree(s)C, 45 degree(s)C and 55 degree(s)C and the time after the pH changed is 4 min, The experimental results also compared with other materials of the gate insulator for pH-ISFET at the room temperature.

Citation Download Citation

Jung Chuan Chou, Hsjian-Ming Tsai, and Yii Fang Wang "Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392126

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