Paper
29 November 2000 Annealing studies of solution-deposited ZrO2 thin films on self-assembled monolayers
K. A. Ritley, F. Schreiber, K.-P. Just, Helmut Dosch, T. P. Niesen, F. Aldinger
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408486
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by alkyltrichlorosilane self-assembled monolayers. The interface structure, thermal stability and densification of these films in the temperature range from room temperature to 750 degree(s)C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution. Decreasing film thickness and increasing density is found upon annealing up to 750 degree(s)C. A 25 nm film revealed the appearance of a mixed-phase crystalline structure at 800 degree(s)C which disappeared upon cooling. There is no visible evidence of stress-induced microstructural changes, such as peeling or cracking.
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K. A. Ritley, F. Schreiber, K.-P. Just, Helmut Dosch, T. P. Niesen, and F. Aldinger "Annealing studies of solution-deposited ZrO2 thin films on self-assembled monolayers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408486
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KEYWORDS
Thin films

Annealing

Self-assembled monolayers

Temperature metrology

X-rays

Reflectivity

Crystals

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