InP and InGaAsP materials grown by solid-source molecular beam epitaxy

Jing-Hui Lu; Zhi-Biao Hao; Zai-Yuan Ren; Yi Luo

doi:10.1117/12.408404

29 November 2000 InP and InGaAsP materials grown by solid-source molecular beam epitaxy

Jing-Hui Lu, Zhi-Biao Hao, Zai-Yuan Ren, Yi Luo

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408404
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

We report all-solid-source molecular beam epitaxy growth of InP and InGaAsP semiconductor materials using a three- temperature-zone valved cracker cell based upon a homemade MBE system. High quality InP film was grown with surface defect density of 65 cm^MIN2 and unintentional doping concentration of 1 X 10¹⁶ cm^-3. Substrate temperature is found to play an important role on surface morphology, growth rate and p-doping characteristic of the InP epitaxial layer. For InAs_yP_1-y, incorporation of As with In seems to increase linearly for As fraction less than 0.6, and independent of As flux when As fraction is greater than 0.9. In_0.56Ga_0.44As_0.94P_0.06 lattice matched to InP has been grown with low temperature PL spectrum peak at 1507 nm and FWHM of 9.8 meV.

Citation Download Citation

Jing-Hui Lu, Zhi-Biao Hao, Zai-Yuan Ren, and Yi Luo "InP and InGaAsP materials grown by solid-source molecular beam epitaxy", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408404

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