Monolithic Lead Salt-Silicon Focal Plane Development

John R. Barrett; Murzban D. Jhabvala; Francis S. Maldari

doi:10.1117/12.935740

30 November 1983 Monolithic Lead Salt-Silicon Focal Plane Development

John R. Barrett, Murzban D. Jhabvala, Francis S. Maldari

Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935740
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.

Citation Download Citation

John R. Barrett, Murzban D. Jhabvala, and Francis S. Maldari "Monolithic Lead Salt-Silicon Focal Plane Development", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935740

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