Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors

K. Alex Anselm; Hongwen Ren; Mauro Vilela; Jun Zheng; C.H. Thompson Lin; Vaidya Nathan; Gail J. Brown

doi:10.1117/12.429405

12 June 2001 Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors

K. Alex Anselm, Hongwen Ren, Mauro Vilela, Jun Zheng, C.H. Thompson Lin, Vaidya Nathan, Gail J. Brown

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429405
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The design and characteristics of very long wavelength InAs/InGaSb strained layer superlattice photodiodes are presented. These photodiodes have cutoff wavelengths ranging from 12 to longer than 15 microns, and are among the longest wavelengths reported for photovoltaic detectors made using this material system. Structural, optical and electrical properties are reported. Measured quantum efficiencies are as high as 10% at 10 micron for a 0.7 micron thick structure at 77K. The absorption coefficients are excellent, however, the electrical properties still need improvement.

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K. Alex Anselm, Hongwen Ren, Mauro Vilela, Jun Zheng, C.H. Thompson Lin, Vaidya Nathan, and Gail J. Brown "Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429405

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