New type of silicon photoelectronic negative resistance devices: PDUBAT

Yanan Sha; Vijay K. Varadan; Vasundara V. Varadan; Shuyong Li; Weilian Guo; Yunguang Zheng

doi:10.1117/12.436624

16 August 2001 New type of silicon photoelectronic negative resistance devices: PDUBAT

Yanan Sha, Vijay K. Varadan, Vasundara V. Varadan, Shuyong Li, Weilian Guo, Yunguang Zheng

Proceedings Volume 4334, Smart Structures and Materials 2001: Smart Electronics and MEMS; (2001) https://doi.org/10.1117/12.436624
Event: SPIE's 8th Annual International Symposium on Smart Structures and Materials, 2001, Newport Beach, CA, United States

Abstract

Photoelectronic DUal Base Transistor (PDUBAT) is a novel kind of photoelectronic negative resistance devices, which features 'N' type negative resistance and small negative resistance R_N. PDUBAT consists of a vertical NPN bipolar transistor and a P type diffusion region with large area over a specific distance. The base and collector of the vertical NPN BJT with a large P diffusion region form a lateral PNP BJT. The emitter and collector of the vertical NPN BJT are connected to the ground and voltage supply respectively, while the P diffusion region is left floated to detect input light signal. When the device is exposed to light, a large number of electron-hole pairs are generated at the PN junction under the P diffusion region. The holes travel along the base of the lateral PNP BJT and become the driving current of the vertical NPN BJT. In experiments, we found that PDUBAT acts as a pulse oscillator without the load of inductors, whose frequency and magnitude are modulated by the intensity of incident light. The oscillating frequency increases while the magnitude decreases with the increasing of light intensity. The manufacturing process of PDUBAT is compatible with that of JBTs, so that it can be incorporated with the ICs.

Citation Download Citation

Yanan Sha, Vijay K. Varadan, Vasundara V. Varadan, Shuyong Li, Weilian Guo, and Yunguang Zheng "New type of silicon photoelectronic negative resistance devices: PDUBAT", Proc. SPIE 4334, Smart Structures and Materials 2001: Smart Electronics and MEMS, (16 August 2001); https://doi.org/10.1117/12.436624

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KEYWORDS

Resistance

Diffusion

Oscillators

Transistors

Light emitting diodes

Signal detection

Silicon

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