Paper
20 August 2001 High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making
Author Affiliations +
Abstract
Recently, there is significant interest in using CA resists for electron beam (E-Beam) applications including mask making, direct write, and projection printing. CA resists provide superior lithographic performance in comparison to traditional non CA E-beam resists in particular high contrast, resolution, and sensitivity. However, most current CA resists exhibit very large sensitivity to PAB and/or PEB temperatures resulting in significant impact on CD control. In addition, image collapse issues associated with high aspect ratio patterning as well as electron scattering effects in low KeV tools necessitate thinner resists. Therefore, there is a need to have a high etch resistant resist system that can withstand the demanding chrome etch process. Previously, we reported on the KRS-XE resist which exhibits dry etch resistance surpassing the industry standard, novolak, in the chrome etch process. This new resist also exhibits excellent lithographic performance - 75 nm lines/space and 55nm/110 space/lines delineated and requires no PEB. This paper will highlight the lithographic and etch performance of this new resist.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wu-Song Huang, Ranee W. Kwong, Wayne M. Moreau, Robert Lang, Christopher F. Robinson, David R. Medeiros, Karen E. Petrillo, Ari Aviram, Arpan P. Mahorowala, Marie Angelopoulos, Christopher Magg, Mark Lawliss, and Thomas B. Faure "High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436656
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KEYWORDS
Etching

Silicon

Resistance

Lithography

Mask making

Photomasks

Dry etching

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