Inspectability study of advanced photomasks with OPC structures

Michael Cross; Kaustuve Bhattacharyya

doi:10.1117/12.436799

22 August 2001 Inspectability study of advanced photomasks with OPC structures

Michael Cross, Kaustuve Bhattacharyya

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436799
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

In the effort to extend the life of a technology node, reticle enhancement techniques are utilized extensively. The inspectability of advanced photomasks becomes increasingly difficult as OPC (Optical Proximity Correction) structures are incorporated in the mask design. OPC structures, such as serifs and sub-resolution assist features, are sub-specification (below the defined specification) geometries for the inspection tool. This makes it difficult to maintain high sensitivity on contamination inspection, while not detecting these OPC structures as false defects. Mask inspection can be broken down into two categories: pattern integrity and contamination, the latter of which is the topic of this paper.

Citation Download Citation

Michael Cross and Kaustuve Bhattacharyya "Inspectability study of advanced photomasks with OPC structures", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436799

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