Novel negative photoresist process for 0.18 um dual damascene

Lin-Hung Shiu; Chih-Ming Lai; Fu-Jye Liang; Hung-Chun Chen; Li-Jui Chen; Shuo-Yen Chou

doi:10.1117/12.436891

24 August 2001 Novel negative photoresist process for 0.18 μm dual damascene

Lin-Hung Shiu, Chih-Ming Lai, Fu-Jye Liang, Hung-Chun Chen, Li-Jui Chen, Shuo-Yen Chou

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436891
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A great deal of progress has been made in the design of dual damascene process, including via first, trench first, and self-aligned. For overlay, via-first process provides the largest process tolerance to misalignment. However, the positive tone resist face to some difficulties in dual damascene via first approach of photo process, because the 0.18micrometers positive tone trench resist can not be exposed and removed in the 0.20micrometers via hole, observed residues from the SEM cross section profiles after development. In contrast, the negative tone resist show s great advantage in the via first process and producing desired patterns without resist residues in the via hole. In this paper, the design of dual damascene photo process using commercial N702Y (JSR) negative tone resist on DUV43 (Brewer Sc.) Bottom anti reflective coating is evaluated. To improve the depth of focus (DOF) of negative tone resist process, the different resolution enhancement techniques (RET) are investigated fro dense and isolated trench patterns: off-axis illumination (annular ½), attenuated phase shift mask (halftone 6%) with 248nm (NA 0.55) exposure technology, and experimental results regarding to its process performance are presented.

Citation Download Citation

Lin-Hung Shiu, Chih-Ming Lai, Fu-Jye Liang, Hung-Chun Chen, Li-Jui Chen, and Shuo-Yen Chou "Novel negative photoresist process for 0.18 μm dual damascene", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436891

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