Paper
14 September 2001 Aerial image measurement methods for fast aberration set-up and illumination pupil verification
Hans van der Laan, Marcel Dierichs, Henk van Greevenbroek, Elaine McCoo, Fred Stoffels, Richard Pongers, Rob Willekers
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Abstract
As feature size decreases, factors like lens aberrations and pupil illumination become increasingly important for the lithographer. Both factors can be quantified using the Transmission Image Sensor (TIS), a built-in measurement device on ASML Step & Scan systems. Advantages of the TIS include robustness and speed, because it is a straightforward measurement technique that does not involve exposure of resist. To allow for on-site minimization of lens aberrations, new lens types will incorporate additional manipulators. Consequently, fast and accurate in-situ measurement of aberrations such as coma and spherical is required. This is achieved by measuring the position of the aerial image at multiple illumination settings, using the flexibility of modern scanners to automatically set the numerical aperture and partial coherence. The accuracy of this technique, proven by strong correlation with interferometric and lithographic data, makes it suitable for system optimization. Regarding measurements of pupil illumination, the new TIS-based technique is compared with the conventional resist-based method. The latter images a defocused pinhole in resist, and is ideal for visual inspection. For the new method, the TIS is scanned in a defocused lateral plane to record the far field image of the pinhole. Quantitative results like pupil uniformity, ellipticity and sigma accuracy are easily obtained.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans van der Laan, Marcel Dierichs, Henk van Greevenbroek, Elaine McCoo, Fred Stoffels, Richard Pongers, and Rob Willekers "Aerial image measurement methods for fast aberration set-up and illumination pupil verification", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435757
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CITATIONS
Cited by 38 scholarly publications and 10 patents.
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KEYWORDS
Monochromatic aberrations

Lithography

Sensors

Scanners

Lithographic illumination

Reticles

Semiconducting wafers

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