High-numerical-aperture 193-nm exposure tool

Harry Sewell; Daniel R. Cote; David M. Williamson; Mark L. Oskotsky; Lev Sakin; Tim O'Neil; John D. Zimmerman; Richard Zimmerman; Mike Nelson; Christopher J. Mason; David Ahouse; Hilary G. Harrold; Philip Lamastra; David Callan

doi:10.1117/12.435758

14 September 2001 High-numerical-aperture 193-nm exposure tool

Harry Sewell, Daniel R. Cote, David M. Williamson, Mark L. Oskotsky, Lev Sakin, Tim O'Neil, John D. Zimmerman, Richard Zimmerman, Mike Nelson, Christopher J. Mason, David Ahouse, Hilary G. Harrold, Philip Lamastra, David Callan

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435758
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

As the semiconductor industry accelerates the pace of change, a shift in exposure wavelength from 248 nm to 193 nm becomes inevitable. Correspondingly, the change to a shorter wavelength and the desire to maintain productivity, necessitates a fundamental reassessment of system design approach. Evaluation of resolution and k-factor for a lithographic tool operating at 193 nm and 0.75 numerical aperture indicates that 130 nm node production will be manageable with binary mask, and that performance consistent with 100 nm node requirements and potentially beyond will be achievable with the use of advanced lithographic techniques. This paper reviews the design, system performance analysis and early results for a full-field catadioptric lithography tool operating at numerical apertures up to 0.75 NA.

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Harry Sewell, Daniel R. Cote, David M. Williamson, Mark L. Oskotsky, Lev Sakin, Tim O'Neil, John D. Zimmerman, Richard Zimmerman, Mike Nelson, Christopher J. Mason, David Ahouse, Hilary G. Harrold, Philip Lamastra, and David Callan "High-numerical-aperture 193-nm exposure tool", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435758

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