Paper
14 September 2001 Testing of optical components for microlithography at 193-nm and 157-nm
Klaus R. Mann, Oliver Apel, G. Eckert, Christian Goerling, Uwe Leinhos, Bernd Schaefer
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Abstract
Absorption loss in UV optics during 193nm and 157nm irradiation is investigated by employing a high-resolution calorimetric technique which allows determining both single and two-photon absorptance at low energy densities. UV calorimetry is also employed to investigate laser induced aging phenomena, e.g. color center formation in fused silica. A separation of transient and cumulative effects can be achieved, giving insight into the loss mechanisms. A strong wavelength dependence of the DUV and VUV absorption characteristics in CaF2 substrates is observed. In addition, Hartmann-Shack wavefront measurements are presented, which allow on-line monitoring of laser-induced compaction in fused silica.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus R. Mann, Oliver Apel, G. Eckert, Christian Goerling, Uwe Leinhos, and Bernd Schaefer "Testing of optical components for microlithography at 193-nm and 157-nm", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435671
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Cited by 3 scholarly publications.
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KEYWORDS
Absorption

Silica

Excimer lasers

Optical components

Ultraviolet radiation

Vacuum ultraviolet

Wavefronts

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