Some lithographic limits of back end lithography

Martin McCallum

doi:10.1117/12.425217

26 April 2001 Some lithographic limits of back end lithography

Martin McCallum

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425217
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

At present we are now approaching the 130 nm technology node, one that a few short years ago we were forecasting would be the end of optical lithography. However, although we are now at this node, we have to use many Resolution Enhancement Techniques to print the desired features. These techniques can provide us with processes that are manufacturable but some of the side effects are not tolerable. This paper will show how the use of off-axis illumination can provide solutions for dense patterning in advanced interconnect. We will also show how the very same techniques that provide the solutions for dense features, can cause problems for more isolated features. The work will show that we can not longer select one technique to provide a solution for advanced features. The work will show that we can no longer select one technique to provide a solution for advanced patterning, but instead have to consider the patterning as an imaging system with several components. The differences in pattern fidelity between features of different density may be what leads us to utilize non- optical lithography.

Citation Download Citation

Martin McCallum "Some lithographic limits of back end lithography", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425217

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