Paper
11 March 2002 Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation
Alexandra Barberet, Gilles L. Fanget, Peter D. Buck, Olivier Toublan, Jean-Charles Richoilley, Michel Tissier
Author Affiliations +
Abstract
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test patterns and then we simulate the mask image of a 4x scale database. The result is saved as a 1x scale gds file and is used, in a normal way, for a 193nm lithography simulation. We notice a large difference between the aerial image of the 193nm lithography based on the database and the one based on the mask process simulation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra Barberet, Gilles L. Fanget, Peter D. Buck, Olivier Toublan, Jean-Charles Richoilley, and Michel Tissier "Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458328
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Data modeling

Databases

Silicon

Lithography

Process modeling

Optical simulations

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