Paper
21 November 2001 Modeling of electrostatic gate operations in the Kane solid state quantum computer
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Proceedings Volume 4591, Electronics and Structures for MEMS II; (2001) https://doi.org/10.1117/12.449136
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia
Abstract
The nuclear spin quantum computer proposed by Kane1 exploits as a qubit array 31P dopants embedded within a silicon matrix. Single-qubit operations are controlled by the application of electrostatic potentials via a set of metallic A gates, situated above the donors, on the silicon surface, that tune the resonance frequency of individual nuclear spins, and a globally applied RF magnetic field that flips spins at resonance. Coupling between qubits is controlled by the application of potentials via a set of J gates, between the donors, that induce an electron-mediated coupling between nuclear spins. We report the results of a study of the electric field and potential profiles arising within the Kane device from typical gate operations. The extent to which a single nuclear spin can be tuned independently of its neighbours, by operation of an associated A-gate, is examined and key design parameters in the Kane architecture are addressed. Implications for current fabrication strategies involving the implantation of 31P atoms are discussed. Solution of the Poisson equation has been carried out by simulation using a TCAD modeling package (Integrated Systems Engineering AG).
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris I. Pakes, Cameron J. Wellard, David N. Jamieson, Lloyd C. L. Hollenberg, Steven D. Prawer, Andrew S. Dzurak, Alex R. Hamilton, and Robert G. Clark "Modeling of electrostatic gate operations in the Kane solid state quantum computer", Proc. SPIE 4591, Electronics and Structures for MEMS II, (21 November 2001); https://doi.org/10.1117/12.449136
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KEYWORDS
Quantum communications

Silicon

Electrons

Quantum computing

Oxides

Systems modeling

TCAD

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