Porous silicon optical waveguides formed by anodization process

Zhenhong Jia

doi:10.1117/12.444568

16 October 2001 Porous silicon optical waveguides formed by anodization process

Zhenhong Jia

Proceedings Volume 4603, Fiber Optics and Optoelectronics for Network Applications; (2001) https://doi.org/10.1117/12.444568
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

A simpler method for the fabrication of multilayer porous silicon optical waveguides is studied in this paper. It is based on the dependence of porosity on illumination intensity during anodisation process. The influence of illumination intensity on porosity during preparing porous silicon was studied. The experimental results show that the porosity of porous silicon has a maximum value under certain illumination intensity. Porous silicon channel waveguides were obtained by controlling the illumination intensities and the anodisation time in anodisation time in anodisation process.

Citation Download Citation

Zhenhong Jia "Porous silicon optical waveguides formed by anodization process", Proc. SPIE 4603, Fiber Optics and Optoelectronics for Network Applications, (16 October 2001); https://doi.org/10.1117/12.444568

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available