Overlay metrology simulations

Joel L. Seligson; Michael Friedmann; Boris Golovanevsky; Vladimir Levinsky

doi:10.1117/12.473469

16 July 2002 Overlay metrology simulations

Joel L. Seligson, Michael Friedmann, Boris Golovanevsky, Vladimir Levinsky

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473469
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In order to control and minimize overlay metrology errors, we have to deal with a number of design parameters both in the metrology tool domain and in the overlay target domain. For enhancing the rate of performance improvement vs. technology investment, simulation can be used for modeling both the effects of overlay metrology tool behavior and the impact of target designs on the ultimate metrology performance.

Citation Download Citation

Joel L. Seligson, Michael Friedmann, Boris Golovanevsky, and Vladimir Levinsky "Overlay metrology simulations", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473469

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