Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect

Vladimir A. Ukraintsev; Mak Kulkarni; Christopher C. Baum; Karen Kirmse; Marco Guevremont; Suresh Lakkapragada; Kamal N. Bhatia; Pedro P. Herrera; Umar K. Whitney

doi:10.1117/12.473457

16 July 2002 Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect

Vladimir A. Ukraintsev, Mak Kulkarni, Christopher C. Baum, Karen Kirmse, Marco Guevremont, Suresh Lakkapragada, Kamal N. Bhatia, Pedro P. Herrera, Umar K. Whitney

Author Affiliations +

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473457
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

A systematic study has been conducted to evaluate accuracy and precision of spectral scatterometry used for two-dimensional (2D) characterization of trenches formed in fluorinated silicon glass (FSG). Experiments were done on short-flow dual-damascene Cu interconnect material. Trench critical dimensions (CD) obtained using KLA-Tencor's spectral scatterometer were correlated with data collected using CD atomic force microscope (AFM), CD scanning electron microscope (SEM) and transmission electron microscope (TEM). 3 major trench characteristics were analyzed: trench width, trench depth and sidewall angle. Spectral scatterometry demonstrated an excellent correlation (above 0.96) with CD AFM and SEM in tested trench width range of (80-240) nm and trench depth range of (410-450) nm. Spectral scatterometry showed acceptable correlation of 0.55 and minimal offset of 0.05 degrees with AFM in tested sidewall angle range of (87.5-89) degrees. Spectral scatterometry has demonstrated better than 1.0 nm and 0.2 degrees dynamic precision (3s) for both width and height and sidewall angle, respectively. We conclude that KLA-Tencor's SpectraCD system is capable of accurate and precise 2D characterization of FSG trenches. We recommend scatterometry as a high throughput and non-destructive metrology for trench linewidth and depth monitoring in low-K dielectric interconnect manufacturing.

Citation Download Citation

Vladimir A. Ukraintsev, Mak Kulkarni, Christopher C. Baum, Karen Kirmse, Marco Guevremont, Suresh Lakkapragada, Kamal N. Bhatia, Pedro P. Herrera, and Umar K. Whitney "Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473457

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available