Measuring thermophysical properties of ultrathin photoresist films

James N. D'Amour; Curtis W. Frank; Uzodinma Okoroanyanwu

doi:10.1117/12.474167

24 July 2002 Measuring thermophysical properties of ultrathin photoresist films

James N. D'Amour, Curtis W. Frank, Uzodinma Okoroanyanwu

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474167
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

We have used ellipsometry to study the glass transition temperature (T_g) of thin films (thicknesses 4-300 nm) of monodisperse polystyrene (PS-M), polydisperse polystyrene (PS-P), and a Shipley photoresist base polymer (SBP) with and without photoacid generator (PAG) on silicon substrates. For films less than 40 nm thick, T_g values decreased with respect to their bulk values for PS-M and SBP films. Films containing PAG exhibited further reduction of T_g values as predicted by the Fox equation to within experimental error.

Citation Download Citation

James N. D'Amour, Curtis W. Frank, and Uzodinma Okoroanyanwu "Measuring thermophysical properties of ultrathin photoresist films", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474167

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