Paper
24 July 2002 New approach for 193-nm resist using modified cycloolefin resin
Joo Hyeon Park, Dong-Chul Seo, Chang-Min Kim, Young Tak Lim, Seong Duk Jo, Jong-Bum Lee, Hyeon Sang Joo, Hyun Pyo Jeon, Seong-Ju Kim, Jae Chang Jung, Ki-Soo Shin, Keun-Kyu Kong, Tatsuya Yamada
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Abstract
We have investigated new photoresist materials based on modified cycloolefin-maleic anhydride resin for 193nm lithography. Compared to COMA resin, the new resin offers several good properties such as UV transmittance, taper in pattern profile, PED stability and storage stability. The resist using the new resin showed good lithographic performances on ArF exposure tool. So, we obtained good hole patterns below 90nm with condition of exposure: PAS 5500/900 full field scanner, resist thickness: 320nm, development: 2.38% TMAH, for 40sec., Illumination: 0.61NA, conventional SOB: 110 degree(s)C/90sec, PEB:130 degree(s)C/90sec, on BARC. In this paper we will report on the properties of new polymer and will show the contact hole pattern that demonstrate progress in these areas.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joo Hyeon Park, Dong-Chul Seo, Chang-Min Kim, Young Tak Lim, Seong Duk Jo, Jong-Bum Lee, Hyeon Sang Joo, Hyun Pyo Jeon, Seong-Ju Kim, Jae Chang Jung, Ki-Soo Shin, Keun-Kyu Kong, and Tatsuya Yamada "New approach for 193-nm resist using modified cycloolefin resin", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474209
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KEYWORDS
Polymers

Etching

Monochromatic aberrations

Transmittance

Resistance

193nm lithography

Lithography

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