Single molecular lithography using polystyrene (MW:2000)

M. Suzuki; Shinzo Morita

doi:10.1117/12.474208

24 July 2002 Single molecular lithography using polystyrene (MW:2000)

M. Suzuki, Shinzo Morita

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474208
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

We analyzed nano-lithography process with using plasma graft polymerized styrene resist and spin coated polystyrene resist in order to find problems and limit of downsizing of the lithography pattern. The ESCA measurement of the interface between the resist and the substrate revealed the chemical structure. Plasma grafted styrene had a chemical bond to the silicon substrate. But spin coated polystyrene was observed that the film condensed without the chemical bond to the substrate. For the spin coated polystyrene film at a thickness of 1nm, ESCA measurement showed a simple peak of carbon and silicon, but showed new chemical shift after Ar ion or E-beam treatment. These results suggested that utilization of the chemical bond between polystyrene and Si will realize single molecular lithography. In this work, we also discussed the mechanism of pattern resolution comparing polystyrene at 2000 and 800 of a molecular weight.

Citation Download Citation

M. Suzuki and Shinzo Morita "Single molecular lithography using polystyrene (MW:2000)", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474208

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