157-nm technology: Where are we today?

Jan Mulkens; Thomas J. Fahey; James A. McClay; Judon M. D. Stoeldraijer; Patrick Wong; Martin Brunotte; Birgit Mecking

doi:10.1117/12.474610

30 July 2002 157-nm technology: Where are we today?

Jan Mulkens, Thomas J. Fahey, James A. McClay, Judon M. D. Stoeldraijer, Patrick Wong, Martin Brunotte, Birgit Mecking

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474610
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper we present a status overview of the development of 157-nm lithography. Solutions and challenges in the exposure system design are discussed. The solutions and challenges include optics, purging, and reticle handling issues. The impact of CaF2 birefringence (intrinsic and stress induced) on lens performance is evaluated. Experimental data on optical path purging and radiation cleaning is presented. The pellicle dilemma is reviewed, and feasibility of a thick glass plate pellicle is discussed. Additionally, a status summary on resist process development is given.

Citation Download Citation

Jan Mulkens, Thomas J. Fahey, James A. McClay, Judon M. D. Stoeldraijer, Patrick Wong, Martin Brunotte, and Birgit Mecking "157-nm technology: Where are we today?", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474610

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