Paper
30 July 2002 Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomasks
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Abstract
The domain decomposition method developed in [1] is examined in more detail. This method enables rapid computer simulation of advanced photomask (alt. PSM, masks with OPC) scattering and transmission properties. Compared to 3D computer simulation, speed-up factors of approximately 400, and up to approximately 200,000 when using the look-up table approach, are possible. Combined with the spatial frequency properties of projection printing systems, it facilitates accurate computer simulation of the projected image (normalized mean square error of a typical image is only a fraction of 1%). Some esoteric accuracy issues of the method are addressed and the way to handle arbitrary, Manhattan-type mask layouts is presented. The method is shown to be valid for off-axis incidence. The cross-talk model developed in [1] is used in 3D mask simulations (2D layouts).
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Konstantinos Adam and Andrew R. Neureuther "Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomasks", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474483
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Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

Diffraction

3D modeling

Computer simulations

Near field

Polarization

Promethium

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