Paper
1 August 2002 Two-dimensional G-MEEF theory and applications
Author Affiliations +
Abstract
Mask errors increasingly contribute into the CD error budget degrading quality of empirical OPC models and fidelity of the OPC features. Though the importance of studying mask error enhancements for the various feature types is well understood, the traditional MEEF theory embraces only simple features like dense lines or contacts, with a single degree of the mask distortion freedom. Complex mask shapes, including those that are routinely generated by OPC, or interactions between neighboring mask errors, have proven extremely difficult to analyze by the traditional MEEF theory. Motivated by the necessity to extend the traditional 1D approach, in previous works the authors introduced G-MEEF (Generalized Mask Error Enhancement) theory to explore complex 2D mask distortions. In this theory, mask and correspondent wafer errors were expressed as contour distortion vectors. The error enhancement is described by MEEM (Mask Error Enhancement Matrix) that transforms mask errors into the wafer distortions. MEEM captures complex effects of the self- and cross- enhancements when neighboring mask features collectively contribute into the wafer errors. Here we concentrate on G-MEEF applications. We study G-MEEF of SRAF structures and hammerheads. Inversion of the MEEM matrix can be used to conduct strict OPC corrections. We discuss different forms of OPC algorithms based upon this conversion.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Granik and Nicolas B. Cobb "Two-dimensional G-MEEF theory and applications", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476941
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Cited by 2 scholarly publications and 51 patents.
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KEYWORDS
Photomasks

Distortion

Semiconducting wafers

Optical proximity correction

SRAF

Critical dimension metrology

Error analysis

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