Preliminary study of 65-nm-node alternating phase-shift mask fabrication

Kouji Hosono; Naoyuki Ishiwata; Satoru Asai; Hiroshi Maruyama; Yutaka Miyahara; Syuichi Sanki; Youhei Yamashita; Yuichiro Hotta; Tomohiko Furukawa; Minoru Naitou; Hiroyuki Miyashita; Shigeru Noguchi

doi:10.1117/12.467487

27 December 2002 Preliminary study of 65 nm node alternating phase-shift mask fabrication

Kouji Hosono, Naoyuki Ishiwata, Satoru Asai, Hiroshi Maruyama, Yutaka Miyahara, Syuichi Sanki, Youhei Yamashita, Yuichiro Hotta, Tomohiko Furukawa, Minoru Naitou, Hiroyuki Miyashita, Shigeru Noguchi

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467487
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

This paper presents about 65 nm-node alternating phase shift mask (APSM) fabrication. One of issue in fabrication of 65 nm-node APSM is second layer patterning process. As chromium (Cr) pattern CD becomes narrow, tighter edge placement accuracy of second layer resist pattern is required. Therefore higher total overlay accuracy is required in second layer patterning process. To solve this issue, we examined application of 50kV electron beam (EB) vector writing system and chemically amplified resist (CAR) process. Error factors which affect total overlay accuracy were quantified experimentally, and minimum required resist coverage through the shifter etching process was determined. From these results, it was confirmed a second layer patterning process using 50kV EB vector writing system and CAR process had enough performance for 65 nm-node APSM fabrication.

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Kouji Hosono, Naoyuki Ishiwata, Satoru Asai, Hiroshi Maruyama, Yutaka Miyahara, Syuichi Sanki, Youhei Yamashita, Yuichiro Hotta, Tomohiko Furukawa, Minoru Naitou, Hiroyuki Miyashita, and Shigeru Noguchi "Preliminary study of 65 nm node alternating phase-shift mask fabrication", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467487

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