Nondestructive diagnostics of bulk GaAs and CdZnTe crystals by nanosecond and picosecond wave-mixing techniques

M. Sudzius; V. Gudelis; A. Aleksiejunas; Jurgis Storasta; Kestutis Jarasiunas; Adriano Cola

doi:10.1117/12.497179

1 April 2003 Nondestructive diagnostics of bulk GaAs and CdZnTe crystals by nanosecond and picosecond wave-mixing techniques

M. Sudzius, V. Gudelis, A. Aleksiejunas, Jurgis Storasta, Kestutis Jarasiunas, Adriano Cola

Author Affiliations +

Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497179
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

Laser induced transient gratings are used to study carrier generation and recombination properties via free carrier nonlinearity in differently grown GaAs and CdZnTe samples. Simulation of free carrier, photorefractive, and absorptive optical nonlinearities for 10-ns pulses and various illumination intensities allowed us to reveal conditions for the efficient transient quenching of EL2 defect at room temperature in semi-insulating GaAs. In addition, the straightforward coupling of nonlinear degenerate four wave-mixing signal at 1.06 μm with the steady-state charge states of EL2 defect is shown to allow a rough estimation of a crystal compensation ratio by EL2 defect. This novel method was applied to liquid-encapsulated Czochralski and Bridgeman-grown samples and compensation values ranging from 0.1 to approximately 0.6 have been derived. Also, feasibility of nanosecond- and picosecond-dynamic grating techniques for control of GaAs wafer quality is shown. The first one allowed fast and highly sensitive mapping of EL2 defect distribution and its charge state; the second one has proved a presence of a fast traps in the vicinity of dislocation conglomerations. Analogous mapping of CdZnTe wafers has shown very high spatial homogeneity of the samples, and revealed areas with the non-photoactive absorption or scattering of light.

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M. Sudzius, V. Gudelis, A. Aleksiejunas, Jurgis Storasta, Kestutis Jarasiunas, and Adriano Cola "Nondestructive diagnostics of bulk GaAs and CdZnTe crystals by nanosecond and picosecond wave-mixing techniques", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497179

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