Resist cracking and adhesion improvement

Il-Ho Lee; Jin-Seo Lee; Kwan-Yul Lee; Chun-Geun Park; Jae-Sung Choi; Jeong Lee

doi:10.1117/12.487726

12 June 2003 Resist cracking and adhesion improvement

Il-Ho Lee, Jin-Seo Lee, Kwan-Yul Lee, Chun-Geun Park, Jae-Sung Choi, Jeong Lee

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.487726
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The resist cracking phenomenon in hole pattern on TEOS oxide has been investigated widely. We found from various tests that the root cause is just poor adhesion between resist and TEOS oxide and better adhesion process can skip additional process like a plasma treatment to avoid resist cracking. In this work, we show the relations between adhesion and prime process and finally suggest the way to improve adhesion, which will be more critical to lithography process below 130nm because of easier pattern collapse due to high aspect ratio and narrow width.

Citation Download Citation

Il-Ho Lee, Jin-Seo Lee, Kwan-Yul Lee, Chun-Geun Park, Jae-Sung Choi, and Jeong Lee "Resist cracking and adhesion improvement", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.487726

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