Paper
22 September 2003 Interferometry system for out-of-plane displacements and microshape measurements of silicon membranes
Author Affiliations +
Proceedings Volume 5124, Optoelectronic and Electronic Sensors V; (2003) https://doi.org/10.1117/12.517118
Event: Optoelectronic and Electronic Sensors V, 2002, Rzeszow, Poland
Abstract
In this paper we introduce a conventional interferometry system for MEMS/MOEMS characterization. We investigate the opto-mechanical properties of silicon micromembranes, where a thin film of PECVD SiOxNy was deposited. Monitoring the quality of this deposition we demonstrated the fabrication of technology for optical channel waveguides, compatible with the integration on micromechanical structures: based on low-stress and low-loss SiOxNy thin layers.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Jozwik, Andrei Sabac, and Christophe Gorecki "Interferometry system for out-of-plane displacements and microshape measurements of silicon membranes", Proc. SPIE 5124, Optoelectronic and Electronic Sensors V, (22 September 2003); https://doi.org/10.1117/12.517118
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KEYWORDS
Silicon

Thin films

Refractive index

Plasma enhanced chemical vapor deposition

Interferometry

Silicon films

Thin film deposition

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