Nonclassical dichromated gelatin technologies for holography

Alexander N. Malov; Nadya Reinhand; Yury N. Vigovsky; Yulia Zagainova; Sergey N. Malov; Igor V. Bogdan; Irina V. Semenova; Vladimir Molocilo; Alexi Petrov

doi:10.1117/12.501851

17 June 2003 Nonclassical dichromated gelatin technologies for holography

Alexander N. Malov, Nadya Reinhand, Yury N. Vigovsky, Yulia Zagainova, Sergey N. Malov, Igor V. Bogdan, Irina V. Semenova, Vladimir Molocilo, Alexi Petrov

Author Affiliations +

Proceedings Volume 5129, Fundamental Problems of Optoelectronics and Microelectronics; (2003) https://doi.org/10.1117/12.501851
Event: Fundamental Problems of Optoelectronics and Microelectronics, 2002, Vladivostok, Russian Federation

Abstract

Dichromated gelatin (DG) is widely used in holography with traditional water developing technique, but it is possible to use one as the real time recording media under the hot vapor developing as well as the self developing DG-modification. The absence of postexposure processing allows to use it for in-situ experiments. The recorded hologram is the result of conformational changes in the structure of a gelatin system. It is the result of hierarchy of sequential structural gelatin marcomolecules modifications. Characteristics of these processes can be effectively controlled at the levels of the primary (the chemical composition of emulsion) and ternary (coil-globule transitions for the entire macromolecule) structures of the SD DG system. We analyzed the influence of IR laser annealing and/or special highly hardened gelatin sublayer on the gelatination acceleration and resulting diffraction efficiency of layers with thickness more than 1 mm. The properties of non-classical new version of DG systems are discussed.

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Alexander N. Malov, Nadya Reinhand, Yury N. Vigovsky, Yulia Zagainova, Sergey N. Malov, Igor V. Bogdan, Irina V. Semenova, Vladimir Molocilo, and Alexi Petrov "Nonclassical dichromated gelatin technologies for holography", Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); https://doi.org/10.1117/12.501851

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