Investigation of phase variation impact on CPL PSM for low k1 imaging

Chun-hung Lin; Michael Hsu; Frank Hsieh; Shu Yi Lin; Stephen D. Hsu; Xuelong Shi; Douglas J. Van Den Broeke; J. Fung Chen; F. C. Tang; W. A. Hsieh; C. Y. Huang

doi:10.1117/12.504176

28 August 2003 Investigation of phase variation impact on CPL PSM for low k1 imaging

Chun-hung Lin, Michael Hsu, Frank Hsieh, Shu Yi Lin, Stephen D. Hsu, Xuelong Shi, Douglas J. Van Den Broeke, J. Fung Chen, F. C. Tang, W. A. Hsieh, C. Y. Huang

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504176
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

From 90nm node and beyond, all of the advanced silicon wafer manufacturing processes are likely to heavily depend on the use of PSM. Two styles of PSM have been considered favorably for both 90nm and 65nm nodes, one is the 6% attenuated PSM and the other one is Chromeless Phase Lithography (CPL) mask. At 65nm node, both of the MoSi-based attenuated PSM and CPL mask are required to be etched into quartz substrate to achieve the desired pi-phase shift. In addition to the demand for very tight top-down mask CD control, for dry-etched process, there are two critical factors can have a significant impact to wafer CD control. They are the etch depth control through feature pitch and the overall etch slope profile. Both contribute to the phase variation. The phase variation degrades the overlapped process window and sufficient phase error can act like spherical lens aberration. This will no doubt impact the wafer imaging performance. In this work, we characterize our dry-etch process by using an orthogonal experiment method and then examine the performance of the optimized recipe by CD metrology, phase uniformity, and actual wafer printing result.

Citation Download Citation

Chun-hung Lin, Michael Hsu, Frank Hsieh, Shu Yi Lin, Stephen D. Hsu, Xuelong Shi, Douglas J. Van Den Broeke, J. Fung Chen, F. C. Tang, W. A. Hsieh, and C. Y. Huang "Investigation of phase variation impact on CPL PSM for low k1 imaging", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504176

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available