Paper
17 December 2003 157-nm alternating phase-shifting mask design and high-NA images
Yung-Tin Chen, Jeff Meute, Kim Dean, Peter D. Brooker
Author Affiliations +
Abstract
This report is the second series of 157nm alternating phase shifting mask done at ISMT. In this report, we present a comprehensive study of balancing aerial image through various feature sizes and pitches. New resutls of resist imagse are analyzed from a 157-nm alternating PSM with a 0.85 NA lens. The mask is made by dual trench technique with a phase-etch of 115nm and an isotropic under-etch of 90nm based on optimized simulation results. With this dual trenched mask, the wafer printing images show tremendous improvement on 'line paring' phenomena. We also investigate some abnormal CD variation across line array observed during this study. The results from this work give an initial assessment of 157-nm capability of alternating PSM and 157-nm resist imaging quality.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yung-Tin Chen, Jeff Meute, Kim Dean, and Peter D. Brooker "157-nm alternating phase-shifting mask design and high-NA images", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518310
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Etching

Phase shifting

Neodymium

Scanning electron microscopy

Critical dimension metrology

Semiconducting wafers

Back to Top