Reticle inspection optimization for 90-nm and 130-nm technology nodes using a multibeam UV wavelength inspection tool

Rick Lai; Luke Hsu; Chiun Hong Kung; Johnson Hung; Wei Hong Huang; Chue-San Yoo; Yao-Tsu Huang; Vincent Hsu

doi:10.1117/12.518016

17 December 2003 Reticle inspection optimization for 90-nm and 130-nm technology nodes using a multibeam UV wavelength inspection tool

Rick Lai, Luke Hsu, Chiun Hong Kung, Johnson Hung, Wei Hong Huang, Chue-San Yoo, Yao-Tsu Huang, Vincent Hsu

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518016
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

As the lithography design rule of IC manufacturing industry migrates into sub-130nm nodes, low k₁ factor prevails, the mask error enhancement factor (MEEF) increases. Low k₁ processing calls for aggressive sub-resolution assist features and the use of attenuated phase shift masks (AttPSMs). The aggressive OPC features pose challenges to reticle inspection due to high false detection, which is time-consuming for defect classification and impacts the throughput of mask manufacturing. Moreover, the high transmission of the shifter material of 193 nm AttPSM also challenges the UV-based reticle inspection tools with high nuisance counts due to undesirable optical diffraction effects. For a given reticle inspection tool, it is necessary to calibrate the system contrast between the clear and opaque regions (quartz/chrome or quartz/MoSi) of the reticles. In this study, we present the influences of various calibration conditions on sensitivity, false and nuisance detection of reticle inspections. Both the STARlight contamination inspections and the die-to-die pattern inspections were carried out using the KLA-Tencor TeraStar inspection tools with production masks and programmed defect test masks including binary intensity masks (BIMs) and AttPSMs. Successful applications with low false detection and adapted sensitivity will be illustrated in terms of optimizing the calibration setup.

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Rick Lai, Luke Hsu, Chiun Hong Kung, Johnson Hung, Wei Hong Huang, Chue-San Yoo, Yao-Tsu Huang, and Vincent Hsu "Reticle inspection optimization for 90-nm and 130-nm technology nodes using a multibeam UV wavelength inspection tool", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518016

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KEYWORDS

Inspection

Calibration

Reticles

Photomasks

Defect detection

Image transmission

Manufacturing

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