Paper
14 May 2004 Effect of PEB exhaust on resist CD for DUV process
Shu-Fen Tsai, Yuh-Shyang Chiu, Chih-Horng Chien, Hann-Yii Gao, Chin-Yu Ku
Author Affiliations +
Abstract
In this work, the effect of exhaust condition during Post Exposure Bake (PEB) on the critical dimension (CD) performance has been investigated for different DUV resists. Two kinds of PEB chamber cover designs have been tested to see the influence of exhaust flow on CD. It has been found that cleaning and adjusting of PEB exhaust flow will change the resist CD. To confirm the impact of PEB exhaust condition on production, resists for both lines and contact holes are verified by scanning electron microscope (SEM).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shu-Fen Tsai, Yuh-Shyang Chiu, Chih-Horng Chien, Hann-Yii Gao, and Chin-Yu Ku "Effect of PEB exhaust on resist CD for DUV process", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534486
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Cited by 1 scholarly publication.
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KEYWORDS
Critical dimension metrology

Deep ultraviolet

Semiconducting wafers

Photoresist processing

Scanning electron microscopy

Phase modulation

Calibration

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