Laser Based Critical Dimension Measurement System For Semiconductor Production

William G. Divens; William Bates Cole Jr.

doi:10.1117/12.947765

23 July 1985 Laser Based Critical Dimension Measurement System For Semiconductor Production

William G. Divens, William Bates Cole Jr.

Proceedings Volume 0538, Optical Microlithography IV; (1985) https://doi.org/10.1117/12.947765
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

A laser based linewidth measurement system has been developed for measurement of critical dimensions on semiconductor wafers. The system meets both the accuracy and throughput requirements for micron and submicron semiconductor production requirements.

Citation Download Citation

William G. Divens and William Bates Cole Jr. "Laser Based Critical Dimension Measurement System For Semiconductor Production", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); https://doi.org/10.1117/12.947765

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