Paper
28 May 2004 The optimization of relative current sensitivity of bipolar magnetotransistor
A. V. Kozlov, M. A. Reveleva, R. D. Tikhonov
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558445
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Using the methods of numerical device-and-process simulation we investigated the current distribution and the relative and absolute current sensitivity of the lateral bipolar dual-collector magnetotransistor (BMT) made in the diffusion well and with the substrate and well contacts connected. The analysis of the current flow at low injection level revealed the negative sensitivity mechanism. The negative relative current sensitivity appears in BMT as a result of the involved in recombination electron and hole flows redistribution induced by magnetic field, i.e., as the result of concentration-recombination mechanism of magnetosensitivity. The optimization of structure of BMT allows to increase the maximal meaning of relative current sensitivity approximately three times.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Kozlov, M. A. Reveleva, and R. D. Tikhonov "The optimization of relative current sensitivity of bipolar magnetotransistor", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558445
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Cited by 3 scholarly publications.
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KEYWORDS
Diffusion

Magnetism

Doping

Resistance

Transistors

Computer simulations

Semiconductors

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