Paper
6 December 2004 Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions
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Abstract
The critical source of haze contamination which mainly occurred on MoSiN surface and the interface of MoSiN and quartz is known as sulfuric ions remained after mask process. In this experiment, the UV treatment with oxygen gas was carried out before and after wet cleaning process for reducing residue ions from mask surface, and the effect with the sequence of UV treatment and wet cleaning was investigated. The composition of amorphous MoSiN layer was slightly modified by 172nm UV treatment with oxygen gas, and the amount of chemical residue ions after wet cleaning which use the piranha and SC-1 was reduced according to the transformation of surface composite. And also the relation of the surface transformation and the phase shift after SC-1 cleaning was evaluated.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Wook Lee, Ho Yong Jung, Mun Sik Kim, Jun Sik Lee, Yong Kyoo Choi, and Oscar Han "Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569015
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KEYWORDS
Ions

Ultraviolet radiation

Oxygen

Chemical analysis

Contamination

Phase shifts

Air contamination

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