Interdiffused InGaAsSbN quantum wells on GaAs for 1300- to 1550-nm lasers

Ronald A. Arif; Nelson Tansu

doi:10.1117/12.591023

28 April 2005 Interdiffused InGaAsSbN quantum wells on GaAs for 1300- to 1550-nm lasers

Ronald A. Arif, Nelson Tansu

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.591023
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Novel method to realize 1300-1550 nm InGaAsNSb quantum well (QW) structure on GaAs substrate is presented and analyzed. The proposed method is based on nitrogen-based inter-diffusion from InGaAsN nanometers-thick barriers into InGaAsSb quantum well layer. This method should allow realization of InGaAsNSb quantum well layer, in particular by metalorganic chemical vapor deposition (MOCVD), which would otherwise be very challenging due to the conflicting nature of optimum epitaxy parameters / conditions that nitride-based and antimonide-based compounds require.

Citation Download Citation

Ronald A. Arif and Nelson Tansu "Interdiffused InGaAsSbN quantum wells on GaAs for 1300- to 1550-nm lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.591023

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