90nm technology contact CD performance characterization via ODP scatterometry

Kelly Barry; Shaunee Cheng; Greet Storms

doi:10.1117/12.600176

10 May 2005 90nm technology contact CD performance characterization via ODP scatterometry

Kelly Barry, Shaunee Cheng, Greet Storms

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.600176
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Contact hole lithography presents a variety of challenges for process development. Measurement of the bottom of the hole presents the most difficulty, and metrology error has traditionally been much larger for contact (3D) metrology than for line/space structures. In light of process windows being significantly smaller for contact holes than for line/space structures, it is difficult to maintain good Contact CD characterization of novel methods requires CD correlation to existing metrology tools including CD linearity across a range of pitches and target CDs. In this paper, we will present contact CD linearity results as characterized by integrated ODP scatterometry, where measurements of hole CD and profile have been made following the lithography process, in a method nondestructive to the 193nm resist pattern on the wafer. The CD linearity is characterized for a 90nm technology device film stack of patterned photoresist (PR), bottom anti-reflective coating (BARC), oxide, and SiC on top of a silicon (Si) substrate. The pattern densities range from dense to semi-dense to isolated, and the grating structures include circular holes aligned in an orthogonal pattern on the wafer. Measurement stability results are also shown, and correlation to CD-SEM and cross-section SEM is provided as a reference metrology. The results of the experiment show that ODP can be used successfully to not only characterize contact CD linearity, but to also monitor film thickness and profile variation, providing a valuable solution for contact hole process development.

Citation Download Citation

Kelly Barry, Shaunee Cheng, and Greet Storms "90nm technology contact CD performance characterization via ODP scatterometry", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600176

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
4 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Metrology

Scanning electron microscopy

Cadmium

Semiconducting wafers

3D metrology

Lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years